I'm using AGESA 1.0.0.7c, and i have 2x 32GB of DDR5 memory (64GB total), in the previous bios I could even get 6200MHz with impedance adjustments I tested, however, now I can't get the same result and I'm having a lot of instability, mainly because the system, by default it sets the refreshment timings very low, so I need to set it manually.
the image below (ZenTimings) is of a configuration without stability tests.
I left the memory settings in automatic mode to try to minimize them, but look at the refreshment timings, they were set according to my memory pattern.
The errors above seem to have occurred due to the refresh being too low when the system automatically configures the memory timings. In this case, even if I increase tensions, I no longer have stability.
The timings of the pair of memories I have are: 32-39-39-96-135 /TRF1 943/TRF2 512/ TRFb 416
my DDR5 memories have the following IC inscriptions:
H5CG48AEBD
X018 229A
DTAGH950WZ5
SK Hynix/
Spoiler
HWiNFO64 Version 7.50-5150
RYZEN_9_7950X -------------------------------------------------------------
[Current Computer]
[Operating System]
Operating System: Microsoft Windows 11 Professional (x64) Build 22621.2283 (22H2)
UEFI Boot: Present
Secure Boot: Disabled
Hypervisor-protected Code Integrity (HVCI): Enabled
Virtual Machine Warning: Microsoft Hyper-V is active. Some results may not reflect real hardware !
Central Processor(s) ------------------------------------------------------
[CPU Unit Count]
Number Of Processor Packages (Physical): 1
Number Of Processor Cores: 16
Number Of Logical Processors: 32
AMD Ryzen 9 7950X ---------------------------------------------------------
[General Information]
Processor Name: AMD Ryzen 9 7950X
Original Processor Frequency: 4500.0 MHz
Original Processor Frequency [MHz]: 4500
[Operating Points]
[Cache and TLB]
[Standard Feature Flags]
[Extended Feature Flags]
[Enhanced Features]
[Memory Ranges]
[MTRRs]
Motherboard ---------------------------------------------------------------
[Computer]
[Motherboard]
Motherboard Model: ASUS ROG STRIX B650E-E GAMING WIFI
[BIOS]
Memory --------------------------------------------------------------------
[General Information]
Total Memory Size: 64 GBytes
Total Memory Size [MB]: 65536
[Current Performance Settings]
Maximum Supported Memory Clock: 2800.0 MHz
Current Memory Clock: 2395.7 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 40-40-40-96
Memory Channels Supported: 2
Memory Channels Active: 2
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 5T
Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 9T
Read to Read Delay (tRDRD_DD) Different DIMM: 9T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 17T
Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 9T
Write to Write Delay (tWRWR_DD) Different DIMM: 9T
Read to Write Delay (tRDWR_SC) Same Chipselect: 19T
Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 19T
Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 19T
Read to Write Delay (tRDWR_SD) Same DIMM: 19T
Read to Write Delay (tRDWR_DD) Different DIMM: 19T
Write to Read Delay (tWRRD_SC) Same Chipselect: 7T
Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 7T
Write to Read Delay (tWRRD_SD) Same DIMM: 7T
Write to Read Delay (tWRRD_DD) Different DIMM: 7T
Read to Precharge Delay (tRTP): 18T
Write to Precharge Delay (tWTP): 107T
Write Recovery Time (tWR): 96T
RAS# to RAS# Delay (tRRD_L): 12T
RAS# to RAS# Delay (tRRD_S): 8T
Row Cycle Time (tRC): 117T
Refresh Cycle Time (tRFC): 943T
Four Activate Window (tFAW): 32T
Row: 1 [P0 CHANNEL A/DIMM 1] - 32 GB PC5-51200 DDR5 SDRAM GeIL CL32-39-39 D5-6400
[General Module Information]
Module Number: 1
Module Size: 32 GBytes
Memory Type: DDR5 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 3200.0 MHz (DDR5-6400 / PC5-51200)
Module Manufacturer: GeIL
Module Part Number: CL32-39-39 D5-6400
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: Year: 2023, Week: 15
Module Manufacturing Location: 1
SDRAM Manufacturer: SK Hynix
DRAM Steppping: N/A
Error Check/Correction: None
[Module Characteristics]
Rank Mix: Symmetrical
Row Address Bits: 16
Column Address Bits: 10
Module Density: 16384 Mb
Dies Per Package: 1
Device Width: x8
Number Of Bank Groups: 8
Banks Per Group: 4
Number Of Ranks: 2
Module Device Width: x4
Channels Per DIMM: x2
Primary Bus Width: x32
Bus Extension: None
Module Voltage (VDD): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VDDQ): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VPP): Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
Wide Temperature Sense: Supported
Bounded Fault: Supported
BL32: Supported
Non-Standard Core Timings: Not Supported
Minimum SDRAM Cycle Time (tCKAVGmin): 0.41600 ns (2400 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.01000 ns
CAS# Latencies Supported: 22, 26, 28, 30, 32, 36, 40, 42
Minimum CAS# Latency Time (tAAmin): 16.666 ns
Minimum RAS# to CAS# Delay (tRCDmin): 16.666 ns
Minimum Row Precharge Time (tRPmin): 16.666 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 2400.0 MHz: 41-41-41-77
Supported Module Timing at 2200.0 MHz: 37-37-37-71
Supported Module Timing at 1800.0 MHz: 31-31-31-58
Supported Module Timing at 1600.0 MHz: 27-27-27-52
Minimum Active to Active/Refresh Time (tRCmin): 48.666 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbmin): 130.000 ns
Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
Activate to Activate Command Delay for Same Bank Group (tRRD_L): 5.000 ns
Read to Read Command Delay for Same Bank Group (tCCD_L): 5.000 ns
Write to Write Command Delay for Same Bank Group (tCCD_L_WR): 20.000 ns
Write to Write Command Delay for Same Bank Group, Second Write not RMW (tCCD_L_WR2): 10.000 ns
Four Activate Window (tFAW): 16.666 ns
Write to Read Command Delay for Same Bank Group (tCCD_L_WTR): 10.000 ns
Write to Read Command Delay for Different Bank Group (tCCD_S_WTR): 2.500 ns
Read to Precharge Command Delay (tRTP): 7.500 ns
SPD Manufacturer: Montage Technology Group
SPD Type: SPD5118
SPD Steppping: 1.5
PMIC0 Device: Present
PMIC0 Manufacturer: Richtek Power
PMIC0 Device Type: PMIC5100
PMIC0 Stepping: 1.1
PMIC0 Type: Small PMIC (Low Current)
PMIC0 Secure Mode: Disabled
Thermal Sensor 0: Not Present
Thermal Sensor 1: Not Present
DRAM Temperature Grade: Extended (XT) : 0 - 95 C
Heat Spreader: Not Present
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): <= 1 mm
[Intel Extreme Memory Profile (XMP)]
XMP Version: 3.0
Number of PMICs: 1
XMP(OC) PMIC: Supported
PMIC OC: Enabled
PMIC voltage default step size: 10 mV
[Enthusiast/Certified Profile [Enabled]]
Profile Name:
Recommended Channel Config: 1 DIMM per Channel
Module VDD Voltage Level: 1.40 V
Module VPP Voltage Level: 1.80 V
Module VDDQ Voltage Level: 1.40 V
Memory Controller Voltage Level: 1.40 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.31200 ns (3200 MHz)
CAS# Latencies Supported: 32
Minimum CAS# Latency Time (tAAmin): 9.984 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.187 ns
Minimum Row Precharge Time (tRPmin): 12.187 ns
Minimum Active to Precharge Time (tRASmin): 30.000 ns
Supported Module Timing at 3200.0 MHz: 32-40-40-97
Minimum Active to Active/Refresh Time (tRCmin): 42.187 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsb): 130.000 ns
Minimum Minimum Write Recovery Time (tWRmin): 30.000 ns
System Command Rate Mode: Default
Real-Time Memory Frequency Overclocking: Supported
Intel Dynamic Memory Boost: Not Supported
Row: 3 [P0 CHANNEL B/DIMM 1] - 32 GB PC5-51200 DDR5 SDRAM GeIL CL32-39-39 D5-6400
[General Module Information]
Module Number: 3
Module Size: 32 GBytes
Memory Type: DDR5 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 3200.0 MHz (DDR5-6400 / PC5-51200)
Module Manufacturer: GeIL
Module Part Number: CL32-39-39 D5-6400
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: Year: 2023, Week: 15
Module Manufacturing Location: 1
SDRAM Manufacturer: SK Hynix
DRAM Steppping: N/A
Error Check/Correction: None
[Module Characteristics]
Rank Mix: Symmetrical
Row Address Bits: 16
Column Address Bits: 10
Module Density: 16384 Mb
Dies Per Package: 1
Device Width: x8
Number Of Bank Groups: 8
Banks Per Group: 4
Number Of Ranks: 2
Module Device Width: x4
Channels Per DIMM: x2
Primary Bus Width: x32
Bus Extension: None
Module Voltage (VDD): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VDDQ): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VPP): Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
Wide Temperature Sense: Supported
Bounded Fault: Supported
BL32: Supported
Non-Standard Core Timings: Not Supported
Minimum SDRAM Cycle Time (tCKAVGmin): 0.41600 ns (2400 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.01000 ns
CAS# Latencies Supported: 22, 26, 28, 30, 32, 36, 40, 42
Minimum CAS# Latency Time (tAAmin): 16.666 ns
Minimum RAS# to CAS# Delay (tRCDmin): 16.666 ns
Minimum Row Precharge Time (tRPmin): 16.666 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 2400.0 MHz: 41-41-41-77
Supported Module Timing at 2200.0 MHz: 37-37-37-71
Supported Module Timing at 1800.0 MHz: 31-31-31-58
Supported Module Timing at 1600.0 MHz: 27-27-27-52
Minimum Active to Active/Refresh Time (tRCmin): 48.666 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbmin): 130.000 ns
Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
Activate to Activate Command Delay for Same Bank Group (tRRD_L): 5.000 ns
Read to Read Command Delay for Same Bank Group (tCCD_L): 5.000 ns
Write to Write Command Delay for Same Bank Group (tCCD_L_WR): 20.000 ns
Write to Write Command Delay for Same Bank Group, Second Write not RMW (tCCD_L_WR2): 10.000 ns
Four Activate Window (tFAW): 16.666 ns
Write to Read Command Delay for Same Bank Group (tCCD_L_WTR): 10.000 ns
Write to Read Command Delay for Different Bank Group (tCCD_S_WTR): 2.500 ns
Read to Precharge Command Delay (tRTP): 7.500 ns
SPD Manufacturer: Montage Technology Group
SPD Type: SPD5118
SPD Steppping: 1.5
PMIC0 Device: Present
PMIC0 Manufacturer: Richtek Power
PMIC0 Device Type: PMIC5100
PMIC0 Stepping: 1.1
PMIC0 Type: Small PMIC (Low Current)
PMIC0 Secure Mode: Disabled
Thermal Sensor 0: Not Present
Thermal Sensor 1: Not Present
DRAM Temperature Grade: Extended (XT) : 0 - 95 C
Heat Spreader: Not Present
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): <= 1 mm
[Intel Extreme Memory Profile (XMP)]
XMP Version: 3.0
Number of PMICs: 1
XMP(OC) PMIC: Supported
PMIC OC: Enabled
PMIC voltage default step size: 10 mV
[Enthusiast/Certified Profile [Enabled]]
Profile Name:
Recommended Channel Config: 1 DIMM per Channel
Module VDD Voltage Level: 1.40 V
Module VPP Voltage Level: 1.80 V
Module VDDQ Voltage Level: 1.40 V
Memory Controller Voltage Level: 1.40 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.31200 ns (3200 MHz)
CAS# Latencies Supported: 32
Minimum CAS# Latency Time (tAAmin): 9.984 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.187 ns
Minimum Row Precharge Time (tRPmin): 12.187 ns
Minimum Active to Precharge Time (tRASmin): 30.000 ns
Supported Module Timing at 3200.0 MHz: 32-40-40-97
Minimum Active to Active/Refresh Time (tRCmin): 42.187 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsb): 130.000 ns
Minimum Minimum Write Recovery Time (tWRmin): 30.000 ns
System Command Rate Mode: Default
Real-Time Memory Frequency Overclocking: Supported
Intel Dynamic Memory Boost: Not Supported
My motherboard Rog Strix B650E-E wifi
my DDR5 memories have the following IC identifying inscription:
H5CG48AEBD
X018 229A
DTAGH950WZ5
SK Hynix/
I discovered one of the causes of instability, or at least what helps make it worse, is the option "VDDSOC Current Capability". It must be set to 100%, even automatic mode causes instability and artifacts may appear on the screen.
other available automatic overclocking options also cause instability. I can't increase the memory clock beyond 4800MHz without having a problem, especially when restarting Windows 11.
Above 4800MHz the controller no longer wants to work in 1:1 mode, only in 1:1/2 mode, therefore, if I try to use 1:1 mode I experience a crash when loading the operating system. Again return to the old BIOS version.
Even though the voltages are always within the limits considered safe, this problem occurred.
